Previous Article Next Article Table of Contents Journal of Materials Science, Vol.39, No.5, 1819-1821, 2004 DOI10.1023/B:JMSC.0000016194.81327.b0 Export Citation Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFET Cho WJ, Im K, Yang JH, Oh J, Lee S Please enable JavaScript to view the comments powered by Disqus.
