In order to synthesize low resistive and high transparent indium-tin-oxide (ITO) films at room temperature, cesium assisted rf plasma sputtering was performed with additional substrate bias. We tried to control positive ions by negative substrate bias and negative ions by positive substrate bias. Plasma parameters, such as plasma density and electron temperature, were also controlled by the addition of cesium. The lowest specific resistivity of 4.4 X 10(-4) Omega cm and high preferred oriented plane of (400) spectra from x-ray diffraction were obtained at the deposition condition of -100 V substrate bias. Our method proves to be very effective in low temperature growth of high quality ITO films. (C) 2003 American Vacuum Society.