We have fabricated nitrogen-doped zinc oxide (ZnO) films that demonstrate p-type behavior by using metalorganic chemical vapor deposition. In our experiment, diethylzinc is used as a Zn precursor, and NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. With these precursors, we have routinely reached an N concentration in the ZnO films of about 1-3 at. %. When the N concentration level is higher than 2 at. %, the films demonstrate p-type characteristics. The carrier concentration of the films varies from 1.0 x 10(15) to 1.0 x 10(18) cm(-3), and mobilities are mainly in the 10(-1) cm(2) V-1 s(-1) range. The lowest film resistivity achieved is similar to20 Omega cm. (C) 2003 American Vacuum Society.