Thin film transistors incorporating patterned cadmium sulfide as the active layer were fabricated. The cadmium sulfide was deposited via chemical bath deposition. A fluorosilane surface modifier printed by microcontact stamping was used to define isolated semiconductor patches without a liftoff procedure. Mobility values of 0.1-1 cm(2)/Vs with on/off ratios exceeding 10(7) have been measured. (C) 2003 Elsevier B.V. All rights reserved.