플라즈마 화학증착법에 의한 질화탄소규소 박막의 성장과 Si 나노점 형성

홍주형; 김상훈; 한윤봉; Ju-Hyung Hong; Sang-Hoon Kim; Yoon-Bong Hahn

Korean Chemical Engineering Research, Vol.42, No.4, 447-450, August, 2004

Export Citation

플라즈마 화학증착법에 의한 질화탄소규소 박막의 성장과 Si 나노점 형성

Formation of Si Nano Dots and Silicon Carbon Nitride Films by Plasma Enhanced Chemical Vapor Deposition

홍주형, 김상훈¹, 한윤봉 ^{1, †}

한국광기술원 연구개발팀, 500-210 광주시 북구 본촌동 459-3
¹전북대학교 환경화학공학부, 나노소재공정연구센터, 561-756 전북 전주시 덕진구 덕진동 1가 664-14

Ju-Hyung Hong, Sang-Hoon Kim¹, and Yoon-Bong Hahn^{1, †}

R&D Team, Korea Photonics Technology Institute, 459-3, Bonchon-dong, Buk-gu, Kwangju 500-210, Korea
¹Division of Environmental & Chemical Engineering, Nanomaterial Research Center, Chonbuk National University, 664-14, 1 Ga, Duckjin-dong, Duckjin-gu, Jeonju, Jeonbuk 561-756, Korea

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초록

질화탄소규소(SiCN)박막을 Si(100)기판에 플라즈마 화학증착법을 이용하여 300 ℃에서 증착하였다. EDX, FT-IR, AFM, SEM을 통해 SiCN박막의 조성과 결합구조, 표면 형태에 대해 분석하였다. 이들을 통한 분석으로 SiCN박막이 대표적으로 Si-C, Si-N, C=N결합으로 형성됨을 알 수 있었다. SiCN박막을 600 ℃ 에서 열처리하면 표면에너지 변화로 인해 표면에 Si나노점들이 형성됨을 보였다.

Silicon carbon nitride (SiCN) films were prepared by plasma enhanced chemical vapor deposition on Si(100) substrate at 300 ℃. The compositions, bonding structures, and surface morphology of the SiCN films were investigated by EDX, FT-IR, AFM and SEM. The main bonds in the films were Si-C, Si-N, and C=N. The surface structure of the as-grown SiCN films was changed by a thermal treatment at 600 ℃, resulting in formation of silicon nanodots.

Keywords:Silicon Carbon Nitride;SiCN;PECVD;Nano-Dots

[References]

Xie E, Ma Z, Lin H, Zhang Z, He D, Opt. Mater., 23, 151 (2003)
Lin HY, Chen YC, Lin CY, Tong YP, Hwa LG, Chen KH, Chen LC, Thin Solid Films, 416(1-2), 85 (2002)
Gong Z, Wang EG, Xu GC, Chen Y, Thin Solid Films, 348(1-2), 114 (1999)
Smirnova TP, Badalian AM, Yakovkina LV, Kaichev VV, Bukhtiyarov VI, Shmakov AN, Asanov IP, Rachlin VI, Fomina AN, Thin Solid Films, 429(1-2), 144 (2003)
Chen LC, Lin HY, Wong CS, Chen KH, Lin ST, Yu YC, Wang CW, Lin EK, Ling KC, Diam. Relat. Mat., 8, 618 (1999)
Xiao X, Li Y, Song L, Peng X, Hu X, Appl. Surf. Sci., 156, 155 (2000)
Wu XC, Cai RQ, Yan PX, Liu WM, Tian J, Appl. Surf. Sci., 185, 262 (2002)
Jedrzejowski P, CiZek J, Amassian A, Klemberg-Sapieha JE, Vlcek J, Martinu L, Thin Solid Films, 447, 201 (2004)

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[1] Xie E, Ma Z, Lin H, Zhang Z, He D, Opt. Mater., 23, 151 (2003)

[2] Lin HY, Chen YC, Lin CY, Tong YP, Hwa LG, Chen KH, Chen LC, Thin Solid Films, 416(1-2), 85 (2002)

[3] Gong Z, Wang EG, Xu GC, Chen Y, Thin Solid Films, 348(1-2), 114 (1999)

[4] Smirnova TP, Badalian AM, Yakovkina LV, Kaichev VV, Bukhtiyarov VI, Shmakov AN, Asanov IP, Rachlin VI, Fomina AN, Thin Solid Films, 429(1-2), 144 (2003)

[5] Chen LC, Lin HY, Wong CS, Chen KH, Lin ST, Yu YC, Wang CW, Lin EK, Ling KC, Diam. Relat. Mat., 8, 618 (1999)

[6] Xiao X, Li Y, Song L, Peng X, Hu X, Appl. Surf. Sci., 156, 155 (2000)

[7] Wu XC, Cai RQ, Yan PX, Liu WM, Tian J, Appl. Surf. Sci., 185, 262 (2002)

[8] Jedrzejowski P, CiZek J, Amassian A, Klemberg-Sapieha JE, Vlcek J, Martinu L, Thin Solid Films, 447, 201 (2004)