Fabrication of Multimode Polymeric Waveguides by Hot Embossing Process: Effect of Sidewall Roughness on Insertion Loss

Keun Byoung Yoon

Macromolecular Research, Vol.12, No.5, 437-442, October, 2004

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Fabrication of Multimode Polymeric Waveguides by Hot Embossing Process: Effect of Sidewall Roughness on Insertion Loss

Keun Byoung Yoon^†

Optical Interconnection Team, Electronics and Telecommunications Research Institute, 161 Gajeong, Yuseong, Daejeon 305-350, Korea

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We have fabricated a polymeric waveguide by using a hot embossing technique and have investigated its propagation loss. The replication of waveguide channels through the use of a hot embossing technique is of interest as a single-step process that could deliver surface roughnesses far smaller than the wavelength. We have evaluated experimentally that the sidewall roughness has a dominant effect on insertion losses of the multimode polymeric waveguide. The propagation loss of the waveguide decreased dramatically upon decreasing the sidewall roughness of the channel. We have confirmed that the preparation of waveguides having nanometer-scale sidewall roughness and 0.1 dB/cm propagation loss is possible when using the hot embossing technique.

Keywords:multimode polymeric waveguides;sidewall roughness;insertion loss;hot embossing.

[References]

Eldada L, Xu C, Stengle KMT, Shacklette LW, Yardley JT, J. Lightwave Technol., 14, 1704 (1996)
Fischbeck G, Moosburger R, Kostrezewa C, Achen A, Petermann K, Electron. Lett., 33, 518 (1997)
Streppel U, Dannberg P, Wachter C, Brauer A, Frohlich L, Houbertz R, Popall M, Opt. Mater., 21, 475 (2002)
Yoon KB, Macromol. Res., 12(3), 290 (2004)
Yoshimura R, Hikita M, Tomaru S, Imamura S, Electron. Lett., 33, 1240 (1997)
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Van V, Absil PP, Hryniewiez JV, Ho PH, J. Lightwave Technol., 19, 1734 (2001)
Choi SJ, Djordjev K, Choi SJ, Dapkus PD, J. Vac. Sci. Technol. B, 20(1), 301 (2002)
Lehmacher S, Neyer A, Electron. Lett., 36, 1052 (2000)
Choi CG, Han SP, Kim BC, Ahn SH, Jeong MY, IEEE Photonics Technol. Lett., 15, 825 (2003)
Yoon KB, Choi CG, Han SP, Jpn. J. Appl. Phys., 43, 3450 (2004)
Heckele M, Bacher W, Muller KM, Microsyst. Technol., 4, 122 (1998)
Ladouceur F, J. Lightwave Technol., 15, 1020 (1997)
Henry CH, Blonder GE, Kazarinov F, J. Lightwave Technol., 7, 1530 (1989)
Ladouceur F, Love JD, Seden JJ, IEE Optoelectron, 141(1), 242 (1994)
Park S, Padeste C, Schift H, Gobrecht J, Microelectron. Eng., 67, 252 (2003)

[Referenced By]

[Related Articles]

[1] Eldada L, Xu C, Stengle KMT, Shacklette LW, Yardley JT, J. Lightwave Technol., 14, 1704 (1996)

[2] Fischbeck G, Moosburger R, Kostrezewa C, Achen A, Petermann K, Electron. Lett., 33, 518 (1997)

[3] Streppel U, Dannberg P, Wachter C, Brauer A, Frohlich L, Houbertz R, Popall M, Opt. Mater., 21, 475 (2002)

[4] Yoon KB, Macromol. Res., 12(3), 290 (2004)

[5] Yoshimura R, Hikita M, Tomaru S, Imamura S, Electron. Lett., 33, 1240 (1997)

[6] Kagami M, Ito H, Ichikawa T, Kato S, Matsuda M, Takahashi N, Appl. Opt., 34, 1041 (1995)

[7] Van V, Absil PP, Hryniewiez JV, Ho PH, J. Lightwave Technol., 19, 1734 (2001)

[8] Choi SJ, Djordjev K, Choi SJ, Dapkus PD, J. Vac. Sci. Technol. B, 20(1), 301 (2002)

[9] Lehmacher S, Neyer A, Electron. Lett., 36, 1052 (2000)

[10] Choi CG, Han SP, Kim BC, Ahn SH, Jeong MY, IEEE Photonics Technol. Lett., 15, 825 (2003)

[11] Yoon KB, Choi CG, Han SP, Jpn. J. Appl. Phys., 43, 3450 (2004)

[12] Heckele M, Bacher W, Muller KM, Microsyst. Technol., 4, 122 (1998)

[13] Ladouceur F, J. Lightwave Technol., 15, 1020 (1997)

[14] Henry CH, Blonder GE, Kazarinov F, J. Lightwave Technol., 7, 1530 (1989)

[15] Ladouceur F, Love JD, Seden JJ, IEE Optoelectron, 141(1), 242 (1994)

[16] Park S, Padeste C, Schift H, Gobrecht J, Microelectron. Eng., 67, 252 (2003)