Numerical Analysis for Transient Point Defect Behavior in Czochralski Silicon Crystal Growth

Jong Hoe Wang; Jong-In Im; Kyoung-Hee Lee

Korean Journal of Chemical Engineering, Vol.21, No.6, 1231-1234, November, 2004

DOI10.1007/BF02719499 Export Citation

Numerical Analysis for Transient Point Defect Behavior in Czochralski Silicon Crystal Growth

Jong Hoe Wang^†, Jong-In Im, and Kyoung-Hee Lee¹

Korea Institute of Ceramic Engineering and Technology, 233-5, Gasan-Dong, Guemcheon-Gu, Seoul 153-801, Korea
¹Department of Applied Chemistry, Dongyang Technical College, 62-160, Kochuk-Dong, Kuro-Gu, Seoul 152-714, Korea

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To study the transient point defect distribution in Czochralski-grown silicon single crystals, a continuum model of point defect dynamics to predict the concentration of interstitial and vacancy is established by estimating expressions for the thermo-physical properties of point defects and the point defect distribution in silicon crystals. It is well known that the concentration of intrinsic point defects in growing silicon crystals is a function of the crystal pull rate (V) and the temperature gradient (G) at the solidification interface inside the crystal, and steady state predictions from point defect dynamics are well agreed with experiment. In this study, finite element simulations have been performed for the growth halt experiment with 150 mm silicon single crystals to study the transient behavior of intrinsic point defects. It has been demonstrated that predicted point defect distributions are in good agreement with experimental results.

Keywords:Point Defect Dynamics;Numerical Analysis;Finite Element Method;Czochralski;Silicon

[References]

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Brown RA, Maroudas D, Sinno T, J. Cryst. Growth, 137, 12 (1994)
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Hasebe M, Takeoka Y, Shinoyama S, Naito S, Jpn. J. Appl. Phys., 28, L1999 (1989)
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[Referenced By]

[1] Ammon W, Dornberger E, Oelkrug H, Weidner H, J. Cryst. Growth, 151, 273 (1995)

[2] Brown RA, Maroudas D, Sinno T, J. Cryst. Growth, 137, 12 (1994)

[3] Dornberger E, Vonammon W, J. Electrochem. Soc., 143(5), 1648 (1996)

[4] Hasebe M, Takeoka Y, Shinoyama S, Naito S, Jpn. J. Appl. Phys., 28, L1999 (1989)

[5] Kim KH, Choi IS, Wang JH, Lee HW, Theor. Appl. Chem. Eng., 8, 5190 (2002)

[6] Lynch DR, Gray WG, J. Comput. Phys., 36, 135 (1980)

[7] Sinno T, Brown RA, Ammon W, Dornberger E, Appl. Phys. Lett., 70, 2250 (1997)

[8] Sinno T, Brown RA, von Ammon W, Dornberger E, J. Electrochem. Soc., 145(1), 302 (1998)

[9] Voronkov VV, J. Cryst. Growth, 59, 625 (1982)

[10] Voronkov VV, Falster R, J. Cryst. Growth, 194, 76 (1998)

[11] Wang JH, Kim DH, Chung DS, Korean J. Chem. Eng., 13(5), 503 (1996)

[12] Wang JH, Kim DH, Yoo HD, J. Cryst. Growth, 198, 120 (1999)

[13] Wang JH, Oh HJ, Yoo HD, Korean J. Chem. Eng., 18(1), 81 (2001)