Thin films of tungsten nitride were deposited from Cl-4(CH3CN)W((NPr)-Pr-l) by metallorganic chemical vapor deposition (MOCVD) in the presence and absence of ammonia (NH3) coreactant. Films were analyzed by X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy (XPS), Films grown with NH3 had increased nitrogen levels and decreased carbon and oxygen levels relative to films grown without NH3 over the entire deposition temperature range (450-700degreesC). Deposition with NH3 at higher temperature (greater than or equal to600degreesC) led to higher crystallinity. Binding energies from XPS measurements were consistent with the formation of WNx (or WNxCy) and WO3 in the films, regardless of whether NH3 was present. The addition of NH3 at lower deposition temperature increased film resistivity significantly. (C) 2004 The Electrochemical Society.