The effect of external mechanical stress on the crystallization of amorphous silicon deposited on thin, flexible glass substrates has been studied. A thin, 5-10 Angstrom, layer of nickel deposited on the surface of the amorphous silicon layer acted as the seed of crystallization and the crystallization was observed to initiate at the top surface and proceed down towards the glass substrate. Application of a tensile stress during the annealing stage led to a uniform, partial crystallization of the amorphous silicon for annealing temperatures as low as 310 degreesC. In contrast, the application of compressive stress led to buckling of the silicon films during annealing under mechanical stress and crystallization was nonuniform over the surface of the sample. The crystalline quality of the films was investigated using scanning electron microscopy, x-ray diffraction, and transmission electron microscopy analyses. In addition, lateral polycrystalline growth of the silicon was observed for the case in which the nickel seed layer was less than 5 Angstrom thick. (C) 2004 American Vacuum Society.