InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes (LEDs) with p-In0.23Ga0.77N tunneling contact layers were successfully fabricated. Compared to p-GaN layers, it was found that we could achieve a much larger hole concentration in p-In0.23Ga0.77N layers. We could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5 nm thick In0.23Ga0.77N layer on top of the p-GaN layer and improve the near-ultraviolet LED output power and lifetime by employing such a p-In0.23Ga0.77N layer. (C) 2004 American Vacuum Society.