Etching characteristics of lead-zirconate-titanate (PZT) thin films fabricated by the sol-gel process were investigated using Cl-2/Ar and BCl3/Ar inductively coupled plasma, respectively. The maximum etch rate of PZT thin films was obtained: Cl-2 (70%)/Ar (30%) and BCl3 (70%)/Ar (30%) gas mixing ratio. The maximum etch rate was 160 nm/min at Cl-2 (70%) /Ar (30%) and 179 nm/min at BCl3 (70%)/Ar(30%). Also, the etch rate was measured by varying the etching parameters such as rf power, dc-bias voltage, and chamber pressure. As rf power was raised, the etch rate of the PZT thin films increased in both Cl-2 /Ar and BCl3 /Ar gas conditions. The increase of dc-bias voltage increases the PZT etch rate, and as the chamber pressure increases, the etch rate of PZT films decreases. Plasma diagnostics were performed using a Langmuir probe. (C) 2004 American Vacuum Society.