We report on the preparation of lattice matched heteroepitaxial films in a dc magnetron sputtering discharge. CrxMo1-x, thin films were grown on MgO(1 0 0) substrate, choosing the composition of the binary metal alloy to be x = 0.63, so that the film is lattice matched to the substrate when the <100> orientation of the film is parallel to the <110> orientation of the substrate. Ex situ x-ray diffraction and low angle x-ray reflectivity measurements were performed to determine the film structure, film thickness, as well as the surface and interface roughness. We determine the optimum growth temperature to be 200 degreesC. Using this temperature 0.4-15 nm thick films were prepared. The resistivity of the films was measured ex situ using a four-point-probe. The resistivity dropped rapidly with increasing thickness. The resistivity versus thickness data was found to be well described with Namba's model, which includes film roughness as a parameter. (C) 2004 American Vacuum Society.