Gd2O3:Eu3+ and Li-doped Gd2O3: Eu3+ luminescent thin films have been grown on Al2O3(0001) substrates at substrate temperatures in the range of 500-700degreesC and oxygen pressure in the range of 100-300 mTorr using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence brightness data obtained from Li-doped Gd2O3:Eu3+ films grown under optimized conditions have indicated that sapphire is a good substrate for the growth of high quality Li-doped Gd2O3: Eu3+ thin film red phosphor. The luminescence of the Gd2O3:Eu3+ films is highly dependent on the crystallinity and surface roughness of the films. In particular, incorporation of Li+ ions into the Gd2O3 lattice induces a remarkablly enhanced crystallinity and photoluminescence. The full width at half maximum of the diffraction peaks is narrower (similar to20%) for films grown with versus films grown without U doping. The root mean square roughness of these films was found to vary from 7.5 to 16.1 nm depending upon the Li doping. The highest emission intensity of Li-doped Gd2O3:Eu3+ films was increased by a factor of 2.3 in comparison with that of Gd2O3: Eu3+ + films. This phosphor is promising for the flat panel displays. (C) 2004 American Vacuum Society.