Zero-bias Schottky barrier height (phi(Bp)) of reactive-sputtered TiN (similar to40 nm) on p-type Si(100) was determined at room temperature and the effect of heat treatment was investigated by forward current-voltage (I-V) measurements. The TiN remained amorphous following annealing. The zero-bias barrier heights for the as-deposited and annealed specimens were in the range of 0.53-0.64 V. The lower phi(Bp) values of 0.53-0.54 V are related to as-deposited and 673 K annealed specimens, whereas the 0.62-0.64 V values refer to samples annealed at 773-783 K. Forward I-V measurements of as-deposited (300 K) TiN/Si diodes were performed in the temperature range of 220-285 K. The barrier height was determined by the activation energy method, resulting in phi(Bp) = 0.58 V. (C) 2004 American Vacuum Society.