In this study, thin films of Ag deposited onto glass substrates were etched using inductively coupled fluorine-based plasmas. The effects of various process conditions on the Ag etch characteristics were evaluated to ascertain whether it would be possible to etch patterned Ag films with high etch rates and smooth sidewalls free of involatile etch products. It was found that involatile etch products remained on the substrate when films were etched in CF4-based gas mixtures possessing either O-2 or N-2 as an additive. However, when Ar was added to either NF3 or CF4, a residue-free etch was obtained provided the partial pressure of At was no less than 50%. It is proposed that the residue-free Ag etch mechanism involves the formation of silver fluoride, which is physically sputtered by Ar+ ions. A Ag etch rate of 160 nm/min with a Ag to photoresist etch selectivity exceeding 1.1 was achieved with an inductive power of 1500 W, a d.c. bias voltage of -180 V and a chamber pressure of 0.8 Pa with 50-50 CF4/Ar partial pressures obtained with 60 sccm CF4/60 sccm Ar flows. In addition, these conditions produced smooth Ag sidewall etch profiles. (C) 2003 Elsevier Science B.V. All rights reserved.