The influence of SnO2 concentration in the target on the film characteristics was studied in order to make the useful database for the device design when low discharge voltage sputtering method and a high density In2O3-SnO2 ceramic targets were used. In the case of the films deposited on unheated substrate, X-ray diffraction profile showed amorphous structure. Minimum resistivity of 358 mu Omega cm was obtained by In2O3 film with mobility of 40.1 cm(2) (V s)(-1) and carrier density of 4.35E + 20 cm(-3). With the increase of SnO2 contents, resistivity of the films increased because of the decrease in both carrier density and mobility. Whereas, the films deposited on heated substrates showed polycrystalline structure. Resistivity was reduced, ranging from 5 to 20 wt.% SnO2, and minimum resistivity of 136 mu Omega cm was obtained at 15 wt.% with mobility of 40.5 cm(2) (V s)(-1) and carrier density of 1.13E + 21 cm(-3). Transmittance and reflectance of these films strongly depend on carrier density. (C) 2003 Elsevier B.V. All rights reserved.