Ferroelectric bismuth lanthanum titanate (Bi3.25La0.75Ti3O12; BLT) thin films were deposited on Pt/TiO2/SiO2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600-700 degreesC. The spontaneous polarization (P-s) and the switching polarization (2P(r)) of BLT film annealed at 700 degreesC for 30 min were 22.6 muC/cm(2) and 29.1 muC/cm(2), respectively. Moreover, the BLT capacitor did not show any significant reduction of hysteresis for 90 min at 300 degreesC in the forming gas atmosphere. (C) 2003 Elsevier B.V. All rights reserved.