An n-type organic material, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), was successfully deposited and patterned on a SiO2/Si wafer by the ink-jet printing technique. Dimethylformamide (DMF) was selected as the solvent in the processing of the ink-jet solution, NTCDA. After thermal annealing, the NTCDA thin film showed higher conductivity than the NTCDA thin film deposited by vacuum sublimation. Degradation of conductivity with time was found when the thin film was open to an ambient atmosphere. (C) 2003 Elsevier B.V. All rights reserved.