The effects of hydrogen implantation (E(ion)similar to300 eV, dosesimilar to4.4 X 10(17) ions/cm(2)) on the optical properties of In0.053Ga0.947N0.017As0.983/GaAs single quantum-wells are studied by spectroscopic ellipsometry and photoluminescence. A strong hydrogen-related blueshift of the quantum-well transition energy is observed by both techniques. After a thermal treatment at 300 degreesC, the original transition energy is nearly recovered. Optical constants of as-grown and implanted In(0.053)Ga0(.947)N(0.017)As(0.983) quantum-well layers are presented in the near-band gap spectral region (0.75-1.5 eV). (C) 2003 Elsevier B.V. All rights reserved.