Ex situ and in situ spectroellipsometric investigation of room temperature oxidation of ion-implanted copper surface was performed. The ellipsometer is capable to measure simultaneously the ellipsometric parameters Psi and Delta at 88 different wavelength values in the range of 280-760 nm within a few minutes in the high precision operation mode using two zone averaging and within a fraction of a second in the one zone operation mode. The native oxide layer formed earlier on the surface of the copper was sputtered off during the aluminum ion implantation. In situ study of the growth of the newly formed native oxide layer on the ion implanted surface was carried out. Ion beam analytical measurements were performed to gain further information on the native oxide layer. The absolute number of the oxygen atoms in the native copper oxide layer was determined. The depth distribution of the implanted aluminum was extracted from Rutherford backscattering spectra. It is found that Al implantation enhanced the oxidation resistance. (C) 2004 Elsevier B.V. All rights reserved.