Epitaxial cobalt disilicide (CoSi2) layers are grown on n-Si0.83Ge0.7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T-s=650 degreesC by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(eta(5)-C5H5)(CO)(2)). Structural and electrical properties of epi-CoSi2/Si0.83Ge0.17/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi2 layers with the low sheet resistance value as low as congruent to4.4 Omega/cm up to the annealing temperature as high as 850 C without the formation of other cobalt silicide phases. At T-A = 900 C, Co2Si and CoSi phases with higher resistivity were formed due to the reaction of remaining Co on the surface with the diffusing Si or Ge from the SiGe layer and as a result the increase in the sheet resistance value to congruent to26.6 Omega/cm was observed. (C) 2003 Elsevier B.V. All rights reserved.