The resistivity rho of very thin Ag- and Cu-films prepared in a very high vacuum on Ge-substrates could be as low as 4 muOmegam for 1-nm thick films. rho was found to be approximately proportional to t(-n), with 2 < n < 2.5 for films with a thickness t between 0.4 and 1 nm. This thickness dependence agrees with a quantum mechanical calculation. p of Mn-films 1.5-4.5-nm thick was nearly constant, and close to the value for bulk manganese. (C) 2003 Elsevier B.V. All rights reserved.