Nanocrystalline BN, AlN, Al2O3 and TiO2 films Were deposited at room temperature onto Si substrates using the Reactive Impulse Plasma Assisted CVD (RIPACVD) method. Some of the so obtained structures were annealed for I h at temperatures of 550 and 770 K. SIMS investigations of chemical constitution of films showed the presence of the region being the mixture of different atoms, formation of which is typical of processes involving 'ion dynamic mixing' (IDM). The intermixing region did not diffuse away during annealing and had no influence on good dielectric properties of investigated layers that played the role of insulator in MIS structures. So far performed spectroscopic measurements of the dynamics of the structure of plasmoids formed in the course of RIPACVD process show strong anisotropy of ion energy distribution. Namely, in the direction perpendicular to the substrate surface it averages only 0.2 eV, while in the parallel direction (i.e. along the axis of the deposition system) it is approximately 10-15 eV However, according to the IDM process theory ions with energies E-i < 10 eV cannot cause creation of intermixing zone. Therefore in the present work we suggest that the formation of this region is caused either by the rotational motion of the plasmoid or due to the bombardment by nanosized nuclei that are created in plasma environment. (C) 2003 Elsevier B.V. All rights reserved.