Amorphous silicon nitride (a-SiNx) films were prepared by low pressure chemical vapor deposition from SiHCl3(Trichlorosilane, TCS)-NH3-N-2 system to obtain stoichiometric film with low hydrogen content. The growth kinetics was investigated as a function of total pressure, NH3/TCS flow ratio and deposition temperature. The film compositions and topography were characterized by X-ray photoelectron spectroscopy, Auger depth profile, Fourier transform infrared spectroscopy, elastic recoil detection and atomic force microscopy, respectively. The growth rate of the films follows an Arrhenius behavior with apparent activation energy of 171 kJ mol(-1) between 730 and 830 degreesC. At lower NH3/TCS flow rate ratios, silicon-rich a-SiNx films were obtained while all deposits were stoichiometric with a N/Si atomic ratio of approximately 1.30-1.33 as the ratios is higher. The hydrogen content of the prepared a-SiNx films is 1.2 at.% that is approximately 15 times lower than those of traditional PECVD films and approximately three times lower than those of previous LPCVD films using silane or dichlorosilane and ammonia. The surface topography of the prepared film is smooth and uniform with a root mean square roughness value of 0.47 nm. (C) 2004 Elsevier B.V. All rights reserved.