p-Type indium-doped SnO2 thin films were successfully fabricated on degenerate n(+) indium tin oxide glass and quartz glass by sol gel dip-coating method. It was found from the X-ray diffraction results that indium-doped SnO2 thin films were in the same rutile structure as that of undoped SnO2. Hall effect measurement results showed that for In/Sn ratio less than or equal to 0.33 and process temperature approximately 525 degreesC, the indium-doped tin oxide were p-type. The I-V curve measurement of a prototype transparent pn(+) junction consisting of a layer of p-type indium-doped SnO2 and a layer of degenerate n(+) tin-doped indium oxide showed typical rectifying characteristics. (C) 2004 Elsevier B.V. All rights reserved.