Targets with the elemental composition of Fe, Fe2Si and FeSi2 were employed in the present study to grow beta-FCSi2 film on Si (100) substrate by means of ion beam sputter deposition (IBSD) method. The results revealed that when FeSi2 target was employed, a Si-rich phase, alpha-FeSi2 (Fe2Si5), was predominant at temperatures above 973 K, while beta-FeSi2 phase was observed only in the limited temperature range at around 873 K. In this case, Si was originated both from the sputtered target and the substrate, thus, the supply of Si was considered to be excessive to sustain beta structure. On the other hand, the films prepared with Fe target became polycrystalline as they grow thicker than 100 nm. In order to optimize the supply of Fe and Si for epitaxial growth, Fe2Si target was employed, where highly (100)-oriented beta-FeSi2 layer of 120 urn in thickness was obtained at 973 K. (C) 2004 Elsevier B.V. All rights reserved.