beta-FeSi2 films were deposited at 750 degreesC by a supplying Fe(CO)(5) and SiH4 simultaneously during metal organic chemical vapor deposition (CVD). Films could be deposited using this precursors system, even though film deposition was not ascertained by the single supply of Fe(CO)(5). Fe(CO)(5) was probably decomposed in gas phases before it reached to substrate surface. It was suggested that a kind of intermediate reactant which was more stable than Fe(CO)(5) created by the simultaneous supply of Fe(CO)(5) and SiH4 makes Fe-Si films. Epitaxial beta-FeSi2 films were obtained on Si(111) substrates, and neither carbide nor oxide phases were detected on XRD patterns. (C) 2004 Elsevier B.V. All rights reserved.