Semiconducting silicides, such as Mg2Si, beta-FeSi2, Ca2Si, MnSi1.7 and Mn(Fe)Si-1.7, were grown and their structural and morphological properties have been characterized. The layers were grown by interdiffusion process between deposited atoms and substrates. When the appropriate substrates and deposition species are used, the silicides can be easily grown using the interdiffusion process. The layers consist of smaller domains for all layers examined, and the shape and size of the domains were much affected by the silicide materials and their growth processes. The structural and morphological features of the silicides are compared, and the growth mechanism and the growth evolution of the silicides are discussed. (C) 2004 Elsevier B.V. All rights reserved.