Electronic properties of semiconducting silicides: fundamentals and recent predictions

Ivanenko LI; Shaposhnikov VL; Filonov AB; Krivosheeva AV; Borisenka VE; Migas DB; Miglio L; Behr G; Schumann J

Thin Solid Films, Vol.461, No.1, 141-147, 2004

DOI10.1016/j.tsf.2004.02.088 Export Citation

Electronic properties of semiconducting silicides: fundamentals and recent predictions

Ivanenko LI, Shaposhnikov VL, Filonov AB, Krivosheeva AV, Borisenka VE, Migas DB, Miglio L, Behr G, Schumann J

This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca2Si and BaSi2, recently found RuSi2 phase, ternaries in Fe-Os-Si and Ru-Os-Si systems, beta-FeSi2, Mg2Si and CrSi2 With stretched and compressed lattices as well as transport properties of beta-FeSi2, ReSi1.75, Ru2Si3 are presented. Prospects for practical applications of semiconducting silicides are discussed. (C) 2004 Published by Elsevier B.V.

Keywords:semiconducting silicides;electronic properties;transport properties