The conduction mechanisms in as-deposited Black Diamond(TM) film and integrated Cu/Black Diamond(TM) damascene structures were investigated. The as-deposited film exhibits Schottky emission from low up to breakdown fields. In the integrated structure, however, Schottky emission dominates at low fields (0.2 to 1.4 MV/cm) and Poole-Frenkel emission dominates at high fields (>1.4 MV/cm). The manifestation of Poole-Frenkel emission in the integrated structure and its absence in the as-deposited film indicate the generation of bulk dielectric traps during the damascene fabrication process. (C) 2004 Elsevier B.V. All rights reserved.