The SiO2/Si/SiO2 thin films were fabricated by ion beam sputtering deposition and electron beam evaporation, respectively. Photoluminescence was measured from the samples deposited, annealed at high temperature, and/or irradiated by Si ions. Even though the photoluminescence associated with Si nanocrystals was obtained from the samples prepared by two kinds of deposition method; in the case of sample deposited by electron beam evaporation, a pre-annealing process was required to get the photoluminescence spectrum contrary to sample made by ion beam sputtering deposition. After the same process was performed with the samples deposited by two deposition methods, the photoluminescence from the samples has been measured differently each other. We discuss the observed difference of the photoluminescence in temis of defect-related photoluminescence and electron spin resonance. (C) 2004 Elsevier B.V All rights reserved.