The donor/acceptor device having configuration ITO/PPHT/CHR/In was fabricated by sequential deposition of Poly 3-phenyl hydrazone thiophene (PPHT) (p-type) and chromotrope-2R (CHR) (n-type) materials, using spin-coating technique onto a conductive Indium-tin-oxide (ITO)-coated glass substrate. The photovoltaic studies were then carried out by analysing its current-voltage (J- V) characteristics in dark as well as under illumination. Additionally, the charge conduction mechanism has also been emphasised through the impedance analysis and capacitance -voltage (C- V) characteristics. The resemblance of the photoaction spectra of the device with the absorption spectra indicates the formation of a junction at the PPHT-CHR interface. Various photovoltaic parameters such as fill factor and power conversion efficiency of the device were evaluated and have been discussed. It is found that both depletion layer width and potential barrier height formed at the PPHT-CHR interface, decreases with temperature. In the donor/acceptor heterojunction device, the possibility exits to cover entire visible region of spectrum. (C) 2004 Elsevier B.V. All rights reserved.