Ultrasonic-assisted successive ionic layer adsorption and reaction method was developed, and the growth rate of film was improved greatly Amorphous ZnS films were successfully deposited on glass and Si(111) wafer using ethylenediamine-complexed zinc source. The morphologies and optical properties of as-deposited films were investigated. Results show that a high growth rate of 3-4.3 nm per cycle can be achieved for the deposition of ZnS film through the combined application of ethylenediamine-complexed zinc precursor and ultrasonic rinsing. Obtained ZnS films exhibit a highly smooth morphology with the grain size of 10-30 nm, layered structure, high transmittance of 90% in visible band, and optical band gap of 3.67 eV (C) 2004 Elsevier B.V. All rights reserved.