The growth of a thin liquid film surrounded by gas pocket(s), undergoing absorption with a zero-order chemical reaction, has been simulated by an apt mathematical model in order to study the influence of various parameters involved. The solution has been obtained semianalytically using Goodman＇s integral method and solving the resulting differential equation by a fourth-order Runge-Kutta numerical integration algorithm. The computations reveal the strong dependence of film growth on reaction rate, diffusivity, and molar volume whereas the effect of gas-pocket volume and initial film thickness are moderate.