Previous Article Next Article Table of Contents Journal of Materials Science, Vol.39, No.20, 6343-6345, 2004 DOI10.1023/B:JMSC.0000043604.83234.1f Export Citation Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates Kim NH, Kang TW, Kim TW Please enable JavaScript to view the comments powered by Disqus.
