Ba6-3xNd8+2xTi18O54 with x=0.25 (simply BNT) dielectric thin films with a thickness of 320 nm have been prepared by pulsed laser deposition. The analysis results of X-ray diffraction showed that the as-deposited BNT films are amorphous, and the amorphous state is stable against a postannealing at temperature up to 850 degreesC. The dielectric constant of the BNT films has been determined to be about 80 with a low loss tan delta of about 0.006 at 1 MHz. The frequency dependence of the capacitance-voltage characteristics of BNT metal-insulator-metal capacitors is investigated. With the frequency increasing, the BNT capacitors showed gradually enhanced capacitor nonlinearity, which can be attributed to the Pt/BNT interface traps. (C) 2004 Elsevier B.V. All rights reserved.