We demonstrate the transfer of sub-10 nm features into nickel using a hard stamp. Nanostructures were transferred directly from diamond and SiC-in a single step by pressing the stamp into nickel at room temperature. The patterns were generated using ultrahigh resolution electron beam lithography. Patterns were transferred to the diamond and SiC using RIE etching with an O-2 plasma used for the diamond and a SF6+O-2 mixture used for the SiC. Hydrogen Silsesquioxane, was used as a resist and served as a mask in the plasma etching. (C) 2004 American Vacuum Society.