We present results of GaAs-based microlasers with photonic crystal mirrors. The lasers are fabricated from GaAs/AlGaAs layer structures with a double GaInNAs quantum well emitting at 1.3 mum -wavelength. The devices are realized as ridge waveguide lasers with two coupled cavities and a total length between 175 and 600 mum. Photonic crystals are used to define the front and back mirrors of the lasers. Threshold currents around 40 mA and output power levels of 80 mW were achieved. Sinole-mode emission with 30 dB side-mode suppression ratio is obtained due to mode interference between the two cavities. (C) 2004 American Vacuum Society.