A first-generation dendrimer (2), containing phenol groups in the exterior for solubilization in aqueous alkaline solutions, was evaluated as a new negative-working, alkaline-developable photoresist material. A negative-working photoresist based on 2, 4,4'-methylenebis[2,6-bis(hydroxymethyl)phenol] as a crosslinker, and diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate as a photoacid generator was demonstrated. This resist gave a clear negative pattern through postbaking at 90 degreesC after exposure to UV light, which was followed by development with a 2.38% aqueous tetramethyl ammonium hydroxide solution at room temperature. (C) 2005 Wiley Periodicals, Inc.