The photoelectrochemical properties of single-component and heterostructured layer-by-layer deposited films bearing tris(2,2'-bipyridine)ruthenium(II) (Ru) moieties were investigated by photocurrent measurements in solutions in the presence of sacrificial reagents. The photocurrent increased with an increase in the thickness of the films and then had a maximum at a thickness of 10 nm. This increase demonstrates a light-harvesting effect based on excitation energy migration among the Ru moieties to the film/electrolyte interface. A cathodic photocurrent was observed for a heterostructured film where bilayers bearing ferrocene (Fc) moieties and bilayers bearing Ru moieties were deposited on an indium tin oxide (ITO) substrate in the order (ITO/Fe/Ru). On the other hand, an anodic photocurrent was observed for the reverse order film (ITO/Ru/Fc). These results show that the direction of the photocurrent is determined by the gradient of the redox potentials formed in the hetero structured films. The internal quantum efficiency for the ITO/Ru/Fc film was twice that for the single-component film (ITO/Ru). This enhancement of the quantum efficiency is due to suppression of charge recombination by successive electron transfers in the hetero structured film.