Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 degrees C were cubic crystalline InN; and at 500 degrees C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 degrees C. The inclusion of metallic indium appeared on the InN film deposited at 500 degrees C. (c) 2004 Elsevier B.V. All rights reserved.