The C 1s, Si 2p, Si 2s, and O 1s inner-shell excitation spectra of vinyltriethoxysilane, trimethylethoxysilane, and vinyltriacetoxysilane have been recorded by electron energy loss spectroscopy under scattering conditions dominated by electric dipole transitions. The spectra are converted to absolute optical oscillator strength scales and interpreted with the aid of ab initio calculations of the inner-shell excitation spectra of model compounds. Electron energy loss spectra recorded in a transmission electron microscope on partly cured adhesion promoter, atomic force micrographs, and images and X-ray absorption spectra from X-ray photoemission electron microscopy of as-spun and cured vinyltriacetoxysilane-based adhesion promoter films on silicon are presented. The use of these measurements in assisting chemistry studies of adhesion promoters for electronics applications is discussed.