자성 메모리의 적용을 위한 나노미터 크기로 패턴된 Magnetic Tunnel Junction의 식각 특성

박익현; 이장우; 정지원; Ik Hyun Park; Jang Woo Lee; Chee Won Chung

Journal of the Korean Industrial and Engineering Chemistry, Vol.16, No.6, 853-856, December, 2005

Export Citation

자성 메모리의 적용을 위한 나노미터 크기로 패턴된 Magnetic Tunnel Junction의 식각 특성

Etch Characteristics of Magnetic Tunnel Junction Stack Patterned with Nanometer Size for Magnetic Random Access Memory

박익현, 이장우, 정지원 ^†

인하대학교 화학공학과 청정기반기술연구소

Ik Hyun Park, Jang Woo Lee, and Chee Won Chung^†

Department of Chemical Engineering and Institute of Clean Technology, Inha University, Incheon 402-751, Korea

E-mail:

초록

자성 메모리반도체의 핵심 소자인 magnetic tunnel junction (MTJ) stack에 대한 고밀도 유도결합 플라즈마 반응성 식각이 연구되었다. MTJ stack은 electron(e)-beam lithography 공정을 사용하여 나노미터 크기의 패턴 형성이 되었으며 식각을 위한 하드 마스크(hard mask)로서 TiN 박막이 이용되었다. TiN 박막은 Ar, Cl2/Ar, 그리고 SF6/Ar들의 가스를 사용하여 식각공정이 연구되었다. E-beam lithography로 패턴된 TiN/MTJ stack은 첫 번째 단계로 TiN 하드 마스크가 식각되고 두 번째로 MTJ stack이 식각되어 완성되었다. MTJ stack은 Ar, Cl2/Ar, BCl3/Ar을 이용하여 식각되었으며 각각의 가스농도와 가스 압력을 변화시켜 MTJ stack의 식각특성이 조사되었다.

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, Cl2/Ar, and SF6/Ar. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, Cl2/Ar, and BCl3/Ar gases by varying gas concentration and pressure.

Keywords:MRAM;MTJ;ICP RIE;E-beam lithography

[References]

Jung KB, Cho H, Hahn YB, Lambers ES, Onishi S, Johnson D, Hurst AT, Childress JR, Park YD, Pearton SJ, J. Appl. Phys., 85, 4788 (1999)
Lee WY, Shin KH, MRAM (magnetic random access memory) 기술현황 및 연구 동향, KIEEME, 13, 12 (2000)
Gallagher WJ, Parlan SSP, Lu Y, Bian XP, Marly A, Roche KP, Altman RA, Righton SA, Jahnes C, Shas TM, Xiao G, J. Appl. Phys., 81 (1997)
Moodera JS, Kinder LR, J. Appl. Phys., 79 (1996)
Baglin JEE, Tabacniks MH, Fontana R, Kellock AJ, Bardin TT, Mater. Sci. Forum, 248, 87 (1997)
Kim SD, Lee JJ, Lim SH, Han SH, Kim HJ, J. Appl. Phys., 85, 5992 (1999)
Tehrani S, Slaughter JM, Chen E, Durlam M, Shi J, DeHerrera M, IEEE Trans. Magn., 35, 2814 (1999)
Resnick DJ, Pendharkar S, Kyler K, Kerszykowski G, Clemens S, Tompkins H, Durlam M, Tehrani S, Microelectron. Eng., 53, 367 (2000)
Matsui N, Mashimo K, Egami A, Konishi A, Okada O, Tsukada T, Vacuum, 66, 479 (2002)
Karttuen J, Kiiham J, Franssilab S, SPIE 2000, 4714, 90 (2000)

[Referenced By]

[Related Articles]

[1] Jung KB, Cho H, Hahn YB, Lambers ES, Onishi S, Johnson D, Hurst AT, Childress JR, Park YD, Pearton SJ, J. Appl. Phys., 85, 4788 (1999)

[2] Lee WY, Shin KH, MRAM (magnetic random access memory) 기술현황 및 연구 동향, KIEEME, 13, 12 (2000)

[3] Gallagher WJ, Parlan SSP, Lu Y, Bian XP, Marly A, Roche KP, Altman RA, Righton SA, Jahnes C, Shas TM, Xiao G, J. Appl. Phys., 81 (1997)

[4] Moodera JS, Kinder LR, J. Appl. Phys., 79 (1996)

[5] Baglin JEE, Tabacniks MH, Fontana R, Kellock AJ, Bardin TT, Mater. Sci. Forum, 248, 87 (1997)

[6] Kim SD, Lee JJ, Lim SH, Han SH, Kim HJ, J. Appl. Phys., 85, 5992 (1999)

[7] Tehrani S, Slaughter JM, Chen E, Durlam M, Shi J, DeHerrera M, IEEE Trans. Magn., 35, 2814 (1999)

[8] Resnick DJ, Pendharkar S, Kyler K, Kerszykowski G, Clemens S, Tompkins H, Durlam M, Tehrani S, Microelectron. Eng., 53, 367 (2000)

[9] Matsui N, Mashimo K, Egami A, Konishi A, Okada O, Tsukada T, Vacuum, 66, 479 (2002)

[10] Karttuen J, Kiiham J, Franssilab S, SPIE 2000, 4714, 90 (2000)