A constantan composition of Cu54Ni46 showing a near-zero temperature coefficient of resistance (TCR) value was obtained on AlN substrates using a Ni power of 100 W and a Cu power of 50 W by dc magnetron cosputtering. The grain size increases and resistivity of the films decreases with increasing deposition temperature. The crystallinity of the films definitely influences the TCR value, which is an important parameter in resistor devices. The films deposited at 100° C exhibited a near-zero TCR value of approximately 7 ppm/° C and the positive TCR values increased with increasing deposition temperature. The films deposited above 100° C do not exhibit irreversibility of the resistance with increasing deposition temperature. © 2005 The Electrochemical Society. All rights reserved.