Atomic layer deposition (ALD) of hafnium, silicate HfxSi1-xO2 thin films from tetrakis(ethylmethylamino)hafnium, tetrakis(ethylmethylamino)silicon, and ozone was accomplished onto 300-mm-diam Si substrates using a hot-wall furnace system with a 50-wafer batch configuration. For 23-nm-thick hafnium silicate, excellent film thickness uniformity with a mean within-wafer uniformity of 0.84% (1σ/mean) and a wafer-to-wafer thickness uniformity of 0.80% (1σ/mean) was achieved over the top, middle, and bottom wafers in the full batch process. Over three times enhancement in wafer-per-hour throughput per chamber was observed as compared with a single-wafer ALD module. © 2005 American Vacuum Society.