Thin ferromagnetic films can be lithographically patterned and incorporated into magnetoelectronic devices that have applications in digital electronics. Their bistable magnetization states are adaptive to application as memory cells in nonvolatile, magnetic random access memories (MRAM). Prototype MRAM chips are characterized by rapid, low energy switching and excellent durability. This novel approach to integrated memory is expected to have immediate impact in the niche market of high performance, embedded memory. Research in the field is confronting several issues associated with the reproducibility of device behavior and scaling device structures to the nanometer dimensions of competing silicon devices. If successful solutions are found, the technology could challenge large segments of the semiconductor memory market. Another research effort is aimed at the development of a spintronic device with power gain. Such a device would enable new kinds of logic architectures, as well as novel on-chip combinations of memory and logic. Our studies investigate the dynamics of high-speed magnetization switching processes. We are also studying charge and spin transport in high mobility semiconductor heterostructures, with the ultimate goal of creating a spin-injected field effect transistor.