Low-energy arsenic implants used in the formation of ultrashallow junctions are characterized on a high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the arsenic dimer ion (As-2(+)) for implant energies lower than 5 keV. Dimer implants require only half the dose and use twice the energy of equivalent As+ implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance (Rs), secondary ion mass spectrometry (SIMS) profiles, electrical test and yield show equivalence between As+ and As-2(+) implants. (c) 2005 The Electrochemical Society. All rights reserved.