CrCxNy and CrSixCy thin films were deposited under low pressure by metallorganic chemical vapor deposition (MOCVD) in the temperature ranges 380-450 degrees C and 450-500 degrees C, respectively, using Cr(NEt2)(4) and Cr(CH2SiMe3)(4) as single-source precursors. The growth was achieved in a cold- wall vertical reactor using, respectively, H-2 and He as the carrier gases. Both types of films exhibit a mirrorlike surface morphology and are amorphous as-deposited. The CrCxNy layers start to crystallize at 600 degrees C after annealing for 1 h under vacuum, whereas it is necessary to reach 650 degrees C under H-2 atmosphere. In both cases, the original ternary phase Cr-3(C0.8N0.2)(2) crystallizes. The resistivity of as-deposited amorphous CrCxNy films is typically 600 mu Omega cm, and it decreases to 150 mu Omega cm after annealing upon the formation of polycrystalline Cr-3 (C,N)2 films. The CrSixCy layers have a very stable amorphous structure until 850 degrees C for 4 h. In spite of their metallic appearance, they exhibit a high resistivity compared to the Cr-3(C,N)(2) films. The main characteristics of these Cr-based layers is presented and discussed. (c) 2005 The Electrochemical Society. All rights reserved.