Layer-by-layer-crystallized SrBi2Ta2O9 (SBT) films were deposited by metallorganic decomposition on a 14-nm-thick HfO2 buffer layer. Experimental results indicate that the metal-ferroelectric-insulator-semiconductor (MFIS) stack with a layer-by-layer-crystallized SBT film exhibits ferroelectric hysteresis and a memory window of around 0.34 V at an operating voltage of 6.0 V. When postdeposition annealing was performed at 850 S C, the layer-by-layer-crystallized MFIS structure exhibited favorable switching characteristics with negligible degradations of the memory window and capacitance retention time. The retention time of this structure exceeded 10(4) s and the extrapolated time was about 105 s. (c) 2005 The Electrochemical Society. All rights reserved.