Cobalt thin films were deposited on the Si(100) substrates with temperatures ranging from 60 degrees C to 250 degrees C using chemical vapor deposition with a metallorganic Co-2(CO)(8) precursor. After Ar sputtering of the surface of the films, X-ray photoelectron spectroscopy (XPS) showed negligible O peak for all samples investigated. Analysis of high-resolution XPS Co and C peaks showed that a Co-C bond exists at high deposition temperatures of 140 and 160 degrees C. But pure Co peaks with no Co carbide bonding were observed for films deposition at 70 and 80 degrees C. Two growth rate maxima were observed at substrate temperatures of 120 and 220 degrees C using the Rutherford backscattering spectrometry. The two maximum growth rates are due to the transition from surface reaction controlled growth (60 to 140 degrees C) to mass-transport controlled growth (150 to 220 degrees C). The decrease of growth rate after the maximum growth rate was believed to come from a change in the decomposition pathways and the sticking coefficient. (c) 2005 Elsevier B.V All rights reserved.